公开(公告)号：US20220285174A1

公开(公告)日：2022-09-08

申请号：US17499988

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Byunghwan KONG ,  Heeyeon KIM ,  Homin SON ,  Geunkyu CHOI

IPC: H01L21/67

Abstract: A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.

公开(公告)号：US20210012053A1

公开(公告)日：2021-01-14

申请号：US16795947

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghwan LIM ,  Hyungock KIM ,  Heeyeon KIM ,  Dongkwan HAN

IPC: G06F30/392

Abstract: Provided are a system for designing a semiconductor circuit and an operating method of the same. The system includes a working memory loading a clustering application for generating a cluster, based on instances respectively corresponding to cells of the semiconductor circuit, and loading a design tool for placing the cells. The clustering application, when an output terminal of a first instance is connected to a second instance and the number of instances connected to the output terminal of the first instance is one, classifies the first instance and the second instance into a candidate group pair. The clustering application, when all instances connected to an input terminal of the second instance are classified into the candidate group pair with the second instance, generates the cluster including the first instance and the second instance.