公开(公告)号：US20190252393A1

公开(公告)日：2019-08-15

申请号：US16391888

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Wook JUNG ,  Dong Oh KIM ,  Seok Han PARK ,  Chan Sic YOON ,  Ki Seok LEE ,  Ho ln LEE ,  Ju Yeon JANG ,  Je Min PARK ,  Jin Woo HONG

IPC: H01L27/11 ,  H01L27/108 ,  H01L29/10 ,  H01L21/8238

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.