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公开(公告)号:US09882480B2
公开(公告)日:2018-01-30
申请号:US15139715
申请日:2016-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungwoo Lee , Minkyu Kwon , Hocheol Chung , Sungkyu Cho
Abstract: A voltage converter includes a power switching unit and an indirect sensing circuit. The power switching unit includes a plurality of power switches and a capacitor. The indirect sensing circuit receives an input voltage, a first voltage at a first node of the capacitor, and a second voltage at a second node of the capacitor, and generates first and second sensing output voltages based on the input voltage and the first and second voltages. A voltage difference between the first and second voltages is equal to a fractional multiple of the input voltage.
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公开(公告)号:US10673338B2
公开(公告)日:2020-06-02
申请号:US16519398
申请日:2019-07-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Chan Lee , Sungwoo Lee , Jungwook Heo , Hyoungseok Oh , Jiheon Kang , Hocheol Chung
Abstract: A voltage converter includes a first transistor, a second transistor, a third transistor, a fourth transistor connected, an output capacitor, a flying capacitor, a first gate driver configured to output a first power supply voltage as a first high level and a first voltage as a first low level, a second gate driver configured to output a second power supply voltage as a second high level and a second voltage as a second low level, a third gate driver configured to output a third power supply voltage as a third high level and a third voltage as a third low level, a fourth gate driver configured to output a fourth power supply voltage as a fourth high level and a ground voltage as a fourth low level.
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公开(公告)号:US20190081549A1
公开(公告)日:2019-03-14
申请号:US15967687
申请日:2018-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Chan LEE , Sungwoo Lee , Jungwook Heo , Hyoungseok Oh , Jiheon Kang , Hocheol Chung
CPC classification number: H02M1/088 , H02M1/08 , H02M3/155 , H02M3/156 , H02M2001/0006 , H02M2001/0035 , H03K17/063 , H03K2217/0081
Abstract: The voltage converter including an inductor connected between an output node and a switch node, a capacitor connected between the output node and a ground node, first transistor connected between the switch node and the ground node, a second transistor connected between the switch node and an input node, a boost capacitor connected between the switch node and a boost node, a first driver configured to drive a gate voltage of the first transistor based on a ground voltage of the ground node and a power supply voltage of a power node, a second driver configured to drive a gate voltage of the second transistor based on a switch voltage of the switch node and a boost voltage of the boost node and, and a regulator configured to control the boost voltage depending on a status of the voltage converter may be provided.
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公开(公告)号:US20240348162A1
公开(公告)日:2024-10-17
申请号:US18677097
申请日:2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sanghoon LEE , Sanghee Kang , Hobin Yi , Hocheol Chung , Woojin Han
Abstract: A voltage converter includes: a plurality of switches, a switch controller, a first flying capacitor and a second flying capacitor connected to the first flying capacitor, and a third flying capacitor and a fourth flying capacitor each being connected to an output node. The switch controller controls the plurality of switches to alternately perform a first operation and a second operation in order to allow the voltage source to generate a first input voltage.
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公开(公告)号:US10361620B2
公开(公告)日:2019-07-23
申请号:US15967687
申请日:2018-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Chan Lee , Sungwoo Lee , Jungwook Heo , Hyoungseok Oh , Jiheon Kang , Hocheol Chung
Abstract: The voltage converter including an inductor connected between an output node and a switch node, a capacitor connected between the output node and a ground node, first transistor connected between the switch node and the ground node, a second transistor connected between the switch node and an input node, a boost capacitor connected between the switch node and a boost node, a first driver configured to drive a gate voltage of the first transistor based on a ground voltage of the ground node and a power supply voltage of a power node, a second driver configured to drive a gate voltage of the second transistor based on a switch voltage of the switch node and a boost voltage of the boost node and, and a regulator configured to control the boost voltage depending on a status of the voltage converter may be provided.
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