公开(公告)号：US10361620B2

公开(公告)日：2019-07-23

申请号：US15967687

申请日：2018-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Chan Lee ,  Sungwoo Lee ,  Jungwook Heo ,  Hyoungseok Oh ,  Jiheon Kang ,  Hocheol Chung

IPC: H02M3/155 ,  H02M1/088

Abstract: The voltage converter including an inductor connected between an output node and a switch node, a capacitor connected between the output node and a ground node, first transistor connected between the switch node and the ground node, a second transistor connected between the switch node and an input node, a boost capacitor connected between the switch node and a boost node, a first driver configured to drive a gate voltage of the first transistor based on a ground voltage of the ground node and a power supply voltage of a power node, a second driver configured to drive a gate voltage of the second transistor based on a switch voltage of the switch node and a boost voltage of the boost node and, and a regulator configured to control the boost voltage depending on a status of the voltage converter may be provided.

公开(公告)号：US10673338B2

公开(公告)日：2020-06-02

申请号：US16519398

申请日：2019-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Chan Lee ,  Sungwoo Lee ,  Jungwook Heo ,  Hyoungseok Oh ,  Jiheon Kang ,  Hocheol Chung

IPC: H02M3/158 ,  H02M3/07 ,  G05F1/56 ,  H02M1/00

Abstract: A voltage converter includes a first transistor, a second transistor, a third transistor, a fourth transistor connected, an output capacitor, a flying capacitor, a first gate driver configured to output a first power supply voltage as a first high level and a first voltage as a first low level, a second gate driver configured to output a second power supply voltage as a second high level and a second voltage as a second low level, a third gate driver configured to output a third power supply voltage as a third high level and a third voltage as a third low level, a fourth gate driver configured to output a fourth power supply voltage as a fourth high level and a ground voltage as a fourth low level.

公开(公告)号：US20190081549A1

公开(公告)日：2019-03-14

申请号：US15967687

申请日：2018-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Chan LEE ,  Sungwoo Lee ,  Jungwook Heo ,  Hyoungseok Oh ,  Jiheon Kang ,  Hocheol Chung

IPC: H02M1/088 ,  H02M3/155

CPC classification number: H02M1/088 ,  H02M1/08 ,  H02M3/155 ,  H02M3/156 ,  H02M2001/0006 ,  H02M2001/0035 ,  H03K17/063 ,  H03K2217/0081

Abstract: The voltage converter including an inductor connected between an output node and a switch node, a capacitor connected between the output node and a ground node, first transistor connected between the switch node and the ground node, a second transistor connected between the switch node and an input node, a boost capacitor connected between the switch node and a boost node, a first driver configured to drive a gate voltage of the first transistor based on a ground voltage of the ground node and a power supply voltage of a power node, a second driver configured to drive a gate voltage of the second transistor based on a switch voltage of the switch node and a boost voltage of the boost node and, and a regulator configured to control the boost voltage depending on a status of the voltage converter may be provided.