公开(公告)号：US20250120114A1

公开(公告)日：2025-04-10

申请号：US18663238

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheolsoon Jeong ,  Sangjung Kang ,  Jido Ryu ,  Hwasung Rhee ,  Hochul Lim

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: An integrated circuit semiconductor device includes an active fin on a substrate, gate structures apart from one another on the active fin, an interlayer insulation layer to insulate the gate structures on the active fin, gate contacts apart from one another on the gate structures, active contacts apart from one another at both sides of the gate structures, the active contacts passing through the interlayer insulation layer and contacting the active fin, an etch stopping layer on the gate structures, the interlayer insulation layer, the gate contacts, and the active contacts, and diffusion break regions between the active contacts, the diffusion break regions being buried in gate trenches passing through the etch stopping layer and the interlayer insulation layer and in fin recesses cutting the active fin under the gate trenches.