公开(公告)号：US20240242770A1

公开(公告)日：2024-07-18

申请号：US18400049

申请日：2023-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojoon KIM ,  Jae-Duk YU ,  Yohan LEE ,  Jiho CHO

IPC: G11C16/34 ,  G11C16/04

CPC classification number: G11C16/3427 ,  G11C16/0483

Abstract: A non-volatile memory device according to some example embodiments includes a memory block including a plurality of cell strings including a plurality of string selection transistors and a plurality of memory cells, a first string selection line connected to a string selection transistor of a first cell string of the plurality of cell strings, and a second string selection line connected to a string selection transistor of a second cell string of the plurality of cell strings; and a control circuit configured to control a recovery operation to apply a recovery voltage with different driving strengths to the first string selection line and the second string selection line.