公开(公告)号：US20150214146A1

公开(公告)日：2015-07-30

申请号：US14591732

申请日：2015-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-ik KIM ,  Hyoung-sub KIM ,  Sung-eui KIM ,  Hoon JEONG

IPC: H01L23/528

CPC classification number: H01L27/10885 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.

Abstract translation: 一种半导体器件包括：衬底，包括有源区，与衬底分离的多个导线结构;多个导线结构之间的多个接触插塞;多个接地焊盘，其连接到多个 接触插塞，多个着陆焊盘之间的着陆焊盘绝缘图案，以及在多个导线结构之间的着陆焊盘绝缘图案和第一导线结构之间的第一绝缘隔离件。