公开(公告)号：US20240339153A1

公开(公告)日：2024-10-10

申请号：US18746974

申请日：2024-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoseok LEE ,  Sunyoung KIM ,  Younghun SEO

IPC: G11C11/4091 ,  G11C11/4094 ,  G11C11/4097

CPC classification number: G11C11/4091 ,  G11C11/4094 ,  G11C11/4097

Abstract: A bit line sense amplifier includes a plurality of semiconductor devices including sensing transistors and selection transistors disposed side by side, and configured to sense a voltage change of a bit line and a complementary bit line, and wiring patterns connected to at least one of the plurality of semiconductor devices. The sensing transistors share a source electrode. The selection transistors may be controlled to be complementarily turned on and off. The wiring patterns include a first wiring pattern electrically connecting gate electrodes of the sensing transistors and drain electrodes of the selection transistors, and a second wiring pattern electrically connecting a gate electrode of a sensing transistor and a drain electrode of another sensing transistor.

公开(公告)号：US20230064611A1

公开(公告)日：2023-03-02

申请号：US17748357

申请日：2022-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoseok LEE ,  Sunyoung KIM ,  Younghun SEO

IPC: G11C11/4091 ,  G11C11/4097 ,  G11C11/4094

Abstract: A bit line sense amplifier includes a plurality of semiconductor devices including sensing transistors and selection transistors disposed side by side, and configured to sense a voltage change of a bit line and a complementary bit line, and wiring patterns connected to at least one of the plurality of semiconductor devices. The sensing transistors share a source electrode. The selection transistors may be controlled to be complementarily turned on and off. The wiring patterns include a first wiring pattern electrically connecting gate electrodes of the sensing transistors and drain electrodes of the selection transistors, and a second wiring pattern electrically connecting a gate electrode of a sensing transistor and a drain electrode of another sensing transistor.