公开(公告)号：US20230029260A1

公开(公告)日：2023-01-26

申请号：US17722683

申请日：2022-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeha LEE ,  Hyeongkyu KIM ,  Taejun YOO ,  Unseon CHEON

IPC: H01L27/02 ,  G06F30/392

Abstract: A semiconductor device according to an embodiment of the present inventive concept includes a plurality of standard cells in a first direction and a second direction, parallel to an upper surface of a substrate and intersecting with each other, and each of the plurality of standard cells having one or more gate structures and one or more active regions, and in some standard cells providing the same circuit and in standard cell regions at different locations, input lines or/and output lines are at different locations.