公开(公告)号：US20230290804A1

公开(公告)日：2023-09-14

申请号：US18061800

申请日：2022-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoongi JOUNG ,  Junghyun KIM ,  Gyeongjin LEE ,  Junsik LEE ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14634

Abstract: A method of manufacturing an image sensor includes forming a first chip structure including a circuit wiring structure, forming a second chip structure on the first chip structure, the second chip structure including a plurality of photoelectric conversion device regions, forming a lens material layer on the second chip structure, forming an isolation groove defining a plurality of lens regions in the lens material layer, forming internal grooves in the plurality of lens regions of the lens material layer surrounded by the isolation groove, and forming lens patterns using the lens material layer in which the isolation groove and the internal grooves are formed.

公开(公告)号：US20170047371A1

公开(公告)日：2017-02-16

申请号：US15090883

申请日：2016-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokha LEE ,  Kyungah JEON ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.

Abstract translation: 图像传感器包括：基板，包括多个光电转换部分和从光电转换部分之间的基板表面延伸的像素隔离沟槽，直接在基板表面上的第一固定电荷膜， 在所述第一固定电荷膜和所述像素隔离沟槽的内壁以及直接位于所述第二固定电荷膜上的绝缘层，所述绝缘层被配置为填充所述像素隔离沟槽。

公开(公告)号：US20230282668A1

公开(公告)日：2023-09-07

申请号：US18117166

申请日：2023-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Junsik LEE ,  Junghyun KIM ,  Gyeongjin LEE ,  Yoongi JOUNG ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes a substrate having first and second surfaces opposing each other; a circuit interconnection structure provided below the first surface of the substrate; a group provided in the substrate and including a plurality of pixel substrate regions; and an isolation structure provided in the substrate, wherein the isolation structure includes an isolation portion surrounding the group and extension portions extending from the isolation portion to a region between the plurality of pixel substrate regions of the group, wherein, in the group, the extension portions have end portions spaced apart from each other, and wherein at least one of the extension portions includes a width reduction region in which a width decreases in a direction away from the isolation portion.

公开(公告)号：US20210193721A1

公开(公告)日：2021-06-24

申请号：US16945965

申请日：2020-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Yunki LEE ,  Hyeongdong JO

IPC: H01L27/146 ,  G01J1/04 ,  G01J1/44 ,  G02B5/20 ,  G02B3/00

Abstract: An image sensor including: a substrate which has a first surface and a second surface opposite to the first surface and pixels arranged in a two-dimensional array, wherein each of the pixels includes a photodiode; a multi-wiring layer arranged on the first surface of the substrate; a color filter layer arranged on the second surface of the substrate and including color filters that respectively correspond to the pixels; and a lens layer arranged on the color filter layer and including a double-sided spherical lens, wherein the double-sided spherical lens includes at least two material layers having different refractive indexes.

公开(公告)号：US20240153974A1

公开(公告)日：2024-05-09

申请号：US18386328

申请日：2023-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yunki LEE ,  Junsik LEE

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14645

Abstract: An image sensor comprising a plurality of first photoelectric conversion regions corresponding to a plurality of first subpixels, a first color filter region above the plurality of first photoelectric conversion regions, and a first microlens above the first color filter region, wherein, the first color filter region includes a first grid structure at a central portion of the first color filter region, and a height of the first grid structure is smaller than a height of the first color filter region.

公开(公告)号：US20230299096A1

公开(公告)日：2023-09-21

申请号：US17987172

申请日：2022-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoongi JOUNG ,  Junghyun KIM ,  Gyeongjin LEE ,  Junsik LEE ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor including a substrate including a first and second surface; a pixel isolation structure penetrating the substrate, arranged in a pixel isolation trench extending from the first to second surface of the substrate, and defining a pixel region; a plurality of sub pixel regions on the pixel region; a plurality of photoelectric conversion regions on the plurality of sub pixel regions; a signal separation structure between the plurality of sub pixel regions, the signal separation structure being in a signal separation trench extending from the second surface of the substrate toward the first surface of the substrate into the substrate; and a micro lens on the second surface of the substrate, the micro lens corresponding to the pixel region, wherein the signal separation structure includes an insulating layer, and the pixel isolation structure includes a conductive layer; and a liner layer between the conductive layer and the substrate.

公开(公告)号：US20240321913A1

公开(公告)日：2024-09-26

申请号：US18526322

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14645

Abstract: An image sensor may include four unit pixels constituting a shared pixel in a 2*2 structure; and a Deep Trench Isolation (DTI) structure isolating the four unit pixels from each other. The DTI structure may include an inner DTI structure inside the shared pixel and an outer DTI structure surrounding the shared pixel. The inner DTI structure may include a first DTI structure passing through a center of the shared pixel and extending in a first direction or a second direction and a second DTI structure extending toward the center of the shared pixel in a direction perpendicular to a direction in which the first DTI structure extends. The shared pixel may include a DTI Center Cut (DCC) region between the first DTI structure and the second DTI structure in a direction in which the second DTI structure extends.

公开(公告)号：US20240292640A1

公开(公告)日：2024-08-29

申请号：US18586789

申请日：2024-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunki LEE ,  Soongju OH ,  Byungku JUNG ,  Hyeyeon PARK

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An image sensor including a semiconductor substrate including a first surface and a second surface opposite to the first surface, an anti-reflection layer on the first surface of the semiconductor substrate, and a photoelectric converter configured to absorb incident light incident through the semiconductor substrate and photoelectrically convert the incident light. The semiconductor substrate includes a refraction pattern on the first surface of the semiconductor substrate and configured to refract the incident light.

公开(公告)号：US20230005980A1

公开(公告)日：2023-01-05

申请号：US17671794

申请日：2022-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boseong KIM ,  Bumsuk KIM ,  Hyeyeon PARK ,  Jeongmin BAE ,  Yunki LEE

IPC: H01L27/146

Abstract: An image sensor includes: a substrate, having first and second surfaces opposing each other in a first direction, on which a plurality of unit pixels are arranged, the plurality of unit pixels including a normal pixel, an autofocusing pixel, and a compensation pixel in a direction, parallel to the first surface; a photodiode disposed in the substrate in each of the plurality of unit pixels; and a device isolation layer disposed between the plurality of unit pixels. The unit pixels include color filters, separated from each other by a grid, and microlenses disposed on the color filters. The compensation pixel is disposed on one side of the autofocusing pixel and includes a compensation microlens, smaller than a normal microlens included in the normal pixel, and a transparent color filter separated from adjacent color filters by a compensation grid smaller than a normal grid included in the normal pixel.

公开(公告)号：US20210175269A1

公开(公告)日：2021-06-10

申请号：US16996047

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato FUJITA ,  Yunki LEE ,  Eunsub SHIM ,  Kyungho LEE ,  Bumsuk KIM ,  Taehan KIM

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/369 ,  H04N5/3745

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.