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公开(公告)号：US20250118676A1
公开(公告)日：2025-04-10
申请号：US18433145
申请日：2024-02-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jintae Kim , Panjae Park , Hyojong Shin , Kang-ill Seo
IPC: H01L23/538 , H01L27/02
Abstract: Provided is a semiconductor device which may include: a plurality of gate structures arranged at a predetermined gate pitch in a 1st direction and extended in a 2nd direction; and a plurality of metal lines arranged at two or more different metal pitches in the 1st direction and extended in the 2nd direction at a same level in a 3rd direction.
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