公开(公告)号：US20240413245A1

公开(公告)日：2024-12-12

申请号：US18666932

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Namgung ,  Hwasung Rhee ,  Youngshil Kim ,  Hyokyeom Kim ,  Joonil Cha

IPC: H01L29/78 ,  H01L23/00

Abstract: A semiconductor device includes a substrate having a first region and a second region surrounding the first region, an integrated circuit structure disposed on the first region, and a seal ring structure disposed on the second region, wherein the integrated circuit structure includes a first active fin extending on the first region in a crystal direction of the substrate, a first epitaxial pattern disposed on one region of the first active fin, and a first contact structure connected to the first epitaxial pattern, and the seal ring structure includes a second active fin extending on the second region in a crystal direction of the substrate, a second epitaxial pattern disposed on the second active fin and including the same material as that of the first epitaxial pattern, and a second contact structure connected to the second epitaxial pattern.