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公开(公告)号:US20230363273A1
公开(公告)日:2023-11-09
申请号:US18311575
申请日:2023-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong Soo KIM , Giwook KANG , Hosuk KANG , Eunsuk KWON , Inkoo KIM , Joonghyuk KIM , Eunhye AN , Juhui YUN , Yeseul LEE , Hyoyoung LEE , Sooghang IHN , Dongjin JANG , Yeon Sook CHUNG , Kyeongsik JU , Eunjeong CHOI , Jun CHWAE
CPC classification number: H10K85/6574 , H10K85/6572 , H10K85/6576 , H10K85/654 , H10K85/40 , C09K11/06 , C09K11/02 , H10K85/346 , H10K85/342 , H10K85/658 , H10K85/633 , H10K50/12 , C09K2211/1044 , C09K2211/1074
Abstract: Provided are a light-emitting device and an electronic apparatus including the same, the light-emitting device including a first electrode, a second electrode, and an interlayer arranged between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes a first compound represented by Formula 1 and a second compound represented by Formula 2:
wherein details of Formulae 1 and 2 are as described herein.-
公开(公告)号:US20170088429A1
公开(公告)日:2017-03-30
申请号:US15222345
申请日:2016-07-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: HYEONJIN SHIN , Hyoyoung LEE , Yeoheung Yoon
Abstract: A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of Mn+1AXn to form a nanosheet, the nanosheet having a formula of Mn+1XnTs, and reducing the nanosheet having a formula of Mn+1XnTsto form an MXene nanosheet, the MXene nanosheet having a formula of Mn+1Xn, wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, Ts is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.
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