Semiconductor devices and method of manufacturing the same

    公开(公告)号:US11004788B2

    公开(公告)日:2021-05-11

    申请号:US16229781

    申请日:2018-12-21

    Abstract: A semiconductor device may include a plurality of active patterns and a plurality of gate structure on a substrate, a first insulating interlayer covering the active patterns and the gate structures, a plurality of first contact plugs extending through the first insulating interlayer, a plurality of second contact plugs extending through the first insulating interlayer, and a first connecting pattern directly contacting a sidewall of at least one contact plug selected from the first and second contact plugs. Each of gate structures may include a gate insulation layer, a gate electrode and a capping pattern. Each of first contact plugs may contact the active patterns adjacent to the gate structure. Each of the second contact plugs may contact the gate electrode in the gate structures. An upper surface of the first connecting pattern may be substantially coplanar with upper surfaces of the first and second contact plugs.

    Apparatus and method for recognizing subject motion using a camera
    6.
    发明授权
    Apparatus and method for recognizing subject motion using a camera 有权
    使用相机识别被摄体动作的装置和方法

    公开(公告)号:US09400563B2

    公开(公告)日:2016-07-26

    申请号:US14447130

    申请日:2014-07-30

    Abstract: A method and an apparatus are provided for displaying pictures according to hand motion inputs. An application is executed for displaying a picture from among a sequence of pictures on a display. Groups of skin color blocks corresponding to a hand are detected from among image frames output from a camera. A motion is detected among the groups of skin color blocks. Direction information is obtained on the detected motion. The application is controlled to display a previous picture or a next picture in the sequence of pictures on the display according to the direction information.

    Abstract translation: 提供了一种用于根据手动输入显示图像的方法和装置。 执行用于在显示器上的图像序列之间显示图像的应用程序。 从相机输出的图像帧中检测与手相对应的肤色块组。 在皮肤颜色块组中检测到运动。 在检测到的运动中获得方向信息。 控制应用程序以根据方向信息在显示器上的图片序列中显示先前图片或下一图片。

    METHOD FOR SHARING SCREEN AND ELECTRONIC DEVICE THEREOF
    7.
    发明申请
    METHOD FOR SHARING SCREEN AND ELECTRONIC DEVICE THEREOF 有权
    共享屏幕的方法及其电子设备

    公开(公告)号:US20150061970A1

    公开(公告)日:2015-03-05

    申请号:US14469313

    申请日:2014-08-26

    CPC classification number: G06F3/1454 G06F3/1423 H04W4/80 H04W84/042

    Abstract: A method and an apparatus for sharing a screen with a counterpart electronic device in an electronic device are provided. In the method, connection with at least one counterpart electronic device is performed. Data to display on the electronic device or data to transmit to the counterpart electronic device are determined. Data is transmitted to the counterpart electronic device. Data transmission to the counterpart electronic device is stopped based on state information of the electronic device or the counterpart electronic device.

    Abstract translation: 提供了一种用于在电子设备中与对方电子设备共享屏幕的方法和装置。 在该方法中,执行与至少一个对应电子设备的连接。 确定要在电子设备上显示的数据或数据以发送到对方的电子设备。 数据被发送到对方电子设备。 基于电子设备或对方电子设备的状态信息,停止对对方电子设备的数据传输。

    Semiconductor devices and method of manufacturing the same

    公开(公告)号:US11616016B2

    公开(公告)日:2023-03-28

    申请号:US17235425

    申请日:2021-04-20

    Abstract: A semiconductor device may include a plurality of active patterns and a plurality of gate structure on a substrate, a first insulating interlayer covering the active patterns and the gate structures, a plurality of first contact plugs extending through the first insulating interlayer, a plurality of second contact plugs extending through the first insulating interlayer, and a first connecting pattern directly contacting a sidewall of at least one contact plug selected from the first and second contact plugs. Each of gate structures may include a gate insulation layer, a gate electrode and a capping pattern. Each of first contact plugs may contact the active patterns adjacent to the gate structure. Each of the second contact plugs may contact the gate electrode in the gate structures. An upper surface of the first connecting pattern may be substantially coplanar with upper surfaces of the first and second contact plugs.

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