公开(公告)号：US11967529B2

公开(公告)日：2024-04-23

申请号：US17093991

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L23/544 ,  H01L21/768 ,  H01L21/78 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L21/7806 ,  H01L23/53295 ,  H01L23/562

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US20210057278A1

公开(公告)日：2021-02-25

申请号：US17093991

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US10854517B2

公开(公告)日：2020-12-01

申请号：US16359440

申请日：2019-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US20200058551A1

公开(公告)日：2020-02-20

申请号：US16359440

申请日：2019-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/532 ,  H01L23/00

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.