公开(公告)号：US09230808B2

公开(公告)日：2016-01-05

申请号：US13957572

申请日：2013-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-woo Han ,  Jun-ho Yoon ,  Dong-chan Kim ,  Gyung-jin Min ,  Jae-hong Park ,  Yong-moon Jang

IPC: H01L21/76 ,  H01L21/00 ,  H01L23/544 ,  H01L21/027 ,  G03F7/20 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L21/027 ,  G03F7/70633 ,  H01L23/544 ,  H01L27/10894 ,  H01L28/40 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.

Abstract translation: 制造半导体器件的方法包括提供被分成形成有图案层的第一区域和其上形成有光密钥的第二区域的衬底。 在衬底的第一区域和第二区域上形成硅层。 图案化硅层以形成露出其上形成有光钥匙的第二区域的光键部分的孔。 形成掩埋氧化物层以填充曝光照相键部分的孔。 通过使用形成在掩埋氧化物层下面的光密钥来形成硅层以形成硅图案层。

公开(公告)号：US20210057278A1

公开(公告)日：2021-02-25

申请号：US17093991

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US10854517B2

公开(公告)日：2020-12-01

申请号：US16359440

申请日：2019-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US20200058551A1

公开(公告)日：2020-02-20

申请号：US16359440

申请日：2019-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L21/78 ,  H01L23/532 ,  H01L23/00

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

公开(公告)号：US11967529B2

公开(公告)日：2024-04-23

申请号：US17093991

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

IPC: H01L23/544 ,  H01L21/768 ,  H01L21/78 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L21/7806 ,  H01L23/53295 ,  H01L23/562

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.