公开(公告)号：US20190148216A1

公开(公告)日：2019-05-16

申请号：US16243464

申请日：2019-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong SHIN ,  Sungmin KIM ,  Byungseo KIM ,  Sunhom Steve PAAK ,  Hyunju BAE

IPC: H01L21/762 ,  H01L29/66 ,  H01L21/324 ,  H01L21/265 ,  H01L29/78 ,  H01L27/088

Abstract: The inventive concepts provide semiconductor devices and methods of manufacturing the same. Semiconductor devices of the inventive concepts may include a fin region comprising a first fin subregion and a second fin subregion separated and isolated from each other by an isolation insulating layer disposed therebetween, a first gate intersecting the first fin subregion, a second gate intersecting the second fin subregion, and a third gate intersecting the isolation insulating layer.