公开(公告)号：US20220301939A1

公开(公告)日：2022-09-22

申请号：US17830396

申请日：2022-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20220068718A1

公开(公告)日：2022-03-03

申请号：US17523223

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20200227321A1

公开(公告)日：2020-07-16

申请号：US16833885

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20190148216A1

公开(公告)日：2019-05-16

申请号：US16243464

申请日：2019-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong SHIN ,  Sungmin KIM ,  Byungseo KIM ,  Sunhom Steve PAAK ,  Hyunju BAE

IPC: H01L21/762 ,  H01L29/66 ,  H01L21/324 ,  H01L21/265 ,  H01L29/78 ,  H01L27/088

Abstract: The inventive concepts provide semiconductor devices and methods of manufacturing the same. Semiconductor devices of the inventive concepts may include a fin region comprising a first fin subregion and a second fin subregion separated and isolated from each other by an isolation insulating layer disposed therebetween, a first gate intersecting the first fin subregion, a second gate intersecting the second fin subregion, and a third gate intersecting the isolation insulating layer.

公开(公告)号：US20180190543A1

公开(公告)日：2018-07-05

申请号：US15903718

申请日：2018-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Sunhom Steve PAAK ,  Heon-Jong SHIN ,  Dong-Ho CHA

IPC: H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823481

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.