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公开(公告)号：US20240363552A1
公开(公告)日：2024-10-31
申请号：US18768684
申请日：2024-07-10
发明人： Chulsoon CHANG , Sangki KIM , Ilgeun JUNG , Junghoon HAN
IPC分类号： H01L23/00 , H01L21/768
CPC分类号： H01L23/562 , H01L21/76877
摘要： A semiconductor device may include a semiconductor substrate, a crack-blocking layer and a crack-blocking portion. The semiconductor substrate may include a plurality of chip regions and a scribe lane region configured to surround each of the plurality of the chip regions. A trench may be defined by one or more inner surfaces of the semiconductor device to be formed in the scribe lane region. The crack-blocking layer may be on an inner surface of the trench. The crack-blocking layer may be configured to block a spreading of a crack, which is generated in the scribe lane region during a cutting of the semiconductor substrate along the scribe lane region, from spreading into any of the chip regions. The crack-blocking portion may at least partially fill the trench and may be configured to block the spreading of the crack from the scribe lane region into any of the chip regions.
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公开(公告)号：US20220262743A1
公开(公告)日：2022-08-18
申请号：US17391659
申请日：2021-08-02
发明人： Chulsoon CHANG , Sangki KIM , Ilgeun JUNG , Junghoon HAN
IPC分类号： H01L23/00 , H01L21/768
摘要： A semiconductor device may include a semiconductor substrate, a crack-blocking layer and a crack-blocking portion. The semiconductor substrate may include a plurality of chip regions and a scribe lane region configured to surround each of the plurality of the chip regions. A trench may be defined by one or more inner surfaces of the semiconductor device to be formed in the scribe lane region. The crack-blocking layer may be on an inner surface of the trench. The crack-blocking layer may be configured to block a spreading of a crack, which is generated in the scribe lane region during a cutting of the semiconductor substrate along the scribe lane region, from spreading into any of the chip regions. The crack-blocking portion may at least partially fill the trench and may be configured to block the spreading of the crack from the scribe lane region into any of the chip regions.
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