公开(公告)号：US20230230834A1

公开(公告)日：2023-07-20

申请号：US17938656

申请日：2022-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Jae Lee ,  Hee Seung Ahn ,  In Seong Park ,  Yun-Ju Han

IPC: H01L21/027 ,  G03F1/22

CPC classification number: H01L21/027 ,  G03F1/22 ,  G03F7/2004

Abstract: An extreme ultra-violet (EUV) lithography process includes lithographically patterning first through fourth photoresist regions on respective first through fourth regions of a semiconductor substrate, in sequence, using a mask. This mask includes a main area in which a main pattern is defined, a first dummy area in which a first dummy pattern is defined, a second dummy area in which a plurality of second sub-dummy patterns are defined at corresponding corners of the mask, and an alignment area including an alignment pattern therein that is spaced farther from a center of the main area relative to the first and second dummy areas. During the lithographically patterning, at least part of the alignment area on the first region of the substrate is exposed at least three times to EUV light, using the mask.