公开(公告)号：US20190229731A1

公开(公告)日：2019-07-25

申请号：US16249129

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insub SHIN ,  Wook KIM

IPC: H03K19/00 ,  H03K3/012 ,  H03K17/30

Abstract: A power gating circuit includes a first switch circuit, a gate circuit, and a second switch circuit. The first switch circuit is configured to disconnect a first voltage line from a second voltage line while a logic block connected to the first voltage line is in a first operation state. The gate circuit is configured to output a control signal having a first logical value if a level of a first voltage on the first voltage line is lower than a reference level while the logic block is in the first operation state. The second switch circuit configured to connect the first voltage line to the second voltage line based on the first logical value of the control signal. The reference level is based on a type of a logic gate included in the gate circuit.