公开(公告)号：US20230352399A1

公开(公告)日：2023-11-02

申请号：US17822246

申请日：2022-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEMYUNG CHOI ,  KANG-ILL SEO ,  JANGGEUN LEE

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/768

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a lower metal via, an upper metal via, a lower metal wire comprising a lower surface contacting the lower metal via and an upper surface contacting the upper metal via, and an upper metal wire on the upper metal via. The upper metal via is between the lower metal wire and the upper metal wire, and each of the lower metal via, the lower metal wire and the upper metal via comprises ruthenium (Ru) or molybdenum (Mo).