公开(公告)号：US20170344301A1

公开(公告)日：2017-11-30

申请号：US15493292

申请日：2017-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JE MIN RYU ,  REUM OH ,  HAK-SOO YU

IPC: G06F3/06

Abstract: An operation method of a semiconductor memory device including a memory cell array and an internal processor configured to perform an internal processing operation includes receiving at the memory device a first mode indicator that indicates whether the memory device should operate in a processor mode or in a normal mode, receiving at the memory device processing information for the memory device, when the first mode indicator indicates that the memory device should operate in the processor mode, storing the processing information in a first memory cell region of the memory cell array, using the stored processing information to perform internal processing by the internal processor, and storing a result of the internal processing in the memory cell array.