公开(公告)号：US20160300908A1

公开(公告)日：2016-10-13

申请号：US14932395

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINSEONG HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L29/06 ,  H01L21/225 ,  H01L29/423 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

Abstract translation: 提供电子装置及其制造方法。 电子设备包括在基板上的能量阻挡层形成层，在基板上的上部沟道材料层，以及覆盖上部沟道材料层和能量阻挡层形成层的栅电极。 栅电极包括面向能阻层形成层的侧表面的侧栅电极部分。 侧栅电极可以被配置为经由能量阻挡形成层的侧表面直接施加到能量阻挡形成层上的电场，从而能够调节能量阻挡形成层和上通道之间的能量势垒 材料层。 电子设备还可以包括设置在基板上并且不接触上通道材料层的下通道材料层。