公开(公告)号：US20140357077A1

公开(公告)日：2014-12-04

申请号：US14190090

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOYOUNG LEE ,  JIN HO AN ,  Byung Lyul PARK ,  JISOON PARK

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/76814 ,  H01L2224/16145

Abstract: Provided are methods for fabricating semiconductor devices having through electrodes. The method may comprise forming a polishing stop layer having a multi-layered structure on a substrate, forming a via hole partially penetrating the substrate, providing the substrate with a first cleaning solution to first clean the substrate, providing the substrate with a second cleaning solution to second clean the substrate, the second cleaning solution being different from the first cleaning solution, and forming a through electrode in the via hole.

Abstract translation: 提供了制造具有通孔电极的半导体器件的方法。 该方法可以包括在衬底上形成具有多层结构的抛光停止层，形成部分穿透衬底的通孔，为衬底提供第一清洁溶液以首先清洁衬底，为衬底提供第二清洁溶液 第二清洗溶液与第一清洗溶液不同，在通孔中形成贯通电极。