公开(公告)号：US20240243010A1

公开(公告)日：2024-07-18

申请号：US18403204

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHYUN LEE ,  EUN HYEA KO ,  SOYOUNG LEE ,  THANH CUONG NGUYEN ,  HOON HAN ,  BYUNGKEUN HWANG ,  HIROYUKI UCHIUZOU ,  KIYOSHI MURATA ,  TOMOHARU YOSHINO ,  YOUNJOUNG CHO

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/76831 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/76844

Abstract: An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:




where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

公开(公告)号：US20140357077A1

公开(公告)日：2014-12-04

申请号：US14190090

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOYOUNG LEE ,  JIN HO AN ,  Byung Lyul PARK ,  JISOON PARK

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/76814 ,  H01L2224/16145

Abstract: Provided are methods for fabricating semiconductor devices having through electrodes. The method may comprise forming a polishing stop layer having a multi-layered structure on a substrate, forming a via hole partially penetrating the substrate, providing the substrate with a first cleaning solution to first clean the substrate, providing the substrate with a second cleaning solution to second clean the substrate, the second cleaning solution being different from the first cleaning solution, and forming a through electrode in the via hole.

Abstract translation: 提供了制造具有通孔电极的半导体器件的方法。 该方法可以包括在衬底上形成具有多层结构的抛光停止层，形成部分穿透衬底的通孔，为衬底提供第一清洁溶液以首先清洁衬底，为衬底提供第二清洁溶液 第二清洗溶液与第一清洗溶液不同，在通孔中形成贯通电极。

公开(公告)号：US20150167705A1

公开(公告)日：2015-06-18

申请号：US14463166

申请日：2014-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SOYOUNG LEE ,  SUHO LEE ,  CHANG-YUN LEE ,  IKSOO KIM ,  JUHYUN LEE ,  JONGWON HONG

IPC: F15D1/00 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32807

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract translation: 基板处理装置包括封闭内部空间的室; 在内部空间的下部的基座; 位于所述内部空间的上部并且在所述基座上方间隔并包括多个分配孔的淋浴喷头; 以及阻挡板组件，其包括具有多个进气孔的主体，所述多个进气孔将所述腔室的顶壁和所述喷淋头之间的空间分成上进气空间和下分配空间，上部的环形分隔肋 身体的表面，以及在身体的下表面上的环形分配单元。