公开(公告)号：US20230306146A1

公开(公告)日：2023-09-28

申请号：US18117857

申请日：2023-03-06

申请人： Samsung Electronics Co., Ltd.

发明人： SEORA PARK ,  JUNGSIK CHOI

IPC分类号： G06F30/10 ,  H01L21/67

CPC分类号： G06F30/10 ,  H01L21/67063 ,  H01L21/67034 ,  G06F2113/14

摘要： A method of manufacturing a semiconductor fabrication system may include preparing a first vacuum pipe, preparing a second vacuum pipe, connecting a first process chamber to a first pump through the first vacuum pipe, and connecting a second process chamber, which is spaced apart from the first process chamber, to a second pump through the second vacuum pipe. The preparing of the first vacuum pipe may include connecting a plurality of first unit pipes to form the first vacuum pipe and calculating a first conductance, which is a total conductance of the first vacuum pipe. The preparing of the second vacuum pipe may include forming the second vacuum pipe by connecting a plurality of second unit pipes such that the second conductance, which is a total conductance of the second vacuum pipe, is equal to the first conductance.