公开(公告)号：US20230178396A1

公开(公告)日：2023-06-08

申请号：US17847090

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Ho HWANG ,  Eun Seok SEO ,  Jun O PARK ,  Jae Hong LIM ,  Seok HEO

IPC: H01L21/67 ,  G03F7/16

CPC classification number: H01L21/67248 ,  G03F7/162 ,  G03F7/168

Abstract: Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.