公开(公告)号：US20170115880A1

公开(公告)日：2017-04-27

申请号：US15263730

申请日：2016-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sil Wan CHANG ,  Byung Gook KIM ,  Jae Young KWON ,  Jong Youl LEE

IPC: G06F3/06 ,  G06F9/44

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0679

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.