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1.
公开(公告)号:US20170115880A1
公开(公告)日:2017-04-27
申请号:US15263730
申请日:2016-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sil Wan CHANG , Byung Gook KIM , Jae Young KWON , Jong Youl LEE
CPC classification number: G06F3/061 , G06F3/0659 , G06F3/0679
Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.
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公开(公告)号:US20180033612A1
公开(公告)日:2018-02-01
申请号:US15641454
申请日:2017-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hye Kyoung LEE , Il Yong JANG , Hwan Seok SEO , Byung Gook KIM
IPC: H01L21/027 , G03F7/00 , G03F1/32 , G03F1/58 , H01L21/033 , G03F1/00
CPC classification number: G03F1/32 , G03F1/0069 , G03F1/34 , G03F1/58 , G03F7/001 , H01L21/0274 , H01L21/0337
Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.
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