公开(公告)号：US09721950B2

公开(公告)日：2017-08-01

申请号：US15051860

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Jae-Chul Kim

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/785

Abstract: A semiconductor device including fin type patterns is provided. The semiconductor device includes a first fin type pattern, a field insulation layer disposed in vicinity of the first fin type pattern and having a first part and a second part, the first part protruding from the second part, a first dummy gate stack formed on the first part of the field insulation layer and including a first dummy gate insulation layer having a first thickness, and a first gate stack formed on the second part of the field insulation layer to intersect the first fin type pattern and including a first gate insulation layer having a second thickness different from the first thickness.