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    Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions
    7.
    发明授权
    Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions 有权
    形成其中包含结晶抑制区的复合介电层的集成电路电容器的方法

    公开(公告)号：US09059330B2

    公开(公告)日：2015-06-16

    申请号：US13716901

    申请日：2012-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-hyoung Choi ,  Jung-hee Chung ,  Cha-young Yoo ,  Young-sun Kim ,  Se-hoon Oh

    IPC: H01L21/8244 ,  H01L29/92 ,  H01L27/108 ,  H01L49/02

    CPC classification number: H01L29/92 ,  H01L27/10852 ,  H01L28/40

    Abstract: Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.

    Abstract translation: 集成电路电容器在其中具有复合电介质层。 这些复合电介质层包括用于增加复合介电层的整体结晶温度的结晶抑制区。 集成电路电容器包括第一和第二电容器电极和在第一和第二电容器电极之间延伸的电容器介电层。 电容器介电层包括邻近第一电容器电极延伸的第一电介质层，邻近第二电容器电极延伸的第二电介质层和在第一和第二电介质层之间延伸的电绝缘的结晶抑制层的复合材料。 电绝缘结晶抑制层由相对于第一和第二介电层具有较高结晶温度特性的材料形成。

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