公开(公告)号：US20200144411A1

公开(公告)日：2020-05-07

申请号：US16414186

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun YOO ,  Ui-hui Kwon ,  Da-won Jeong ,  Jae-ho Kim ,  Jun-hyeok Kim ,  Kang-hyun Baek ,  Kyu-ok Lee

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.