Semiconductor device package
    1.
    发明授权

    公开(公告)号:US10510724B2

    公开(公告)日:2019-12-17

    申请号:US15832266

    申请日:2017-12-05

    Abstract: A semiconductor device package includes a buffer layer having an upper surface perpendicular to a first direction, a plurality of semiconductor chips stacked on the buffer layer one by one in the first direction, and a chip sealing material surrounding sidewalls of the semiconductor chips. The semiconductor chips include an upper semiconductor chip at a farthest position from the buffer layer and a remaining plurality of intermediate semiconductor chips. Each of the intermediate semiconductor chips includes through silicon vias (TSVs) passing through each of the intermediate semiconductor chips. The upper semiconductor chip includes a trench formed in at least a portion of a periphery of the upper semiconductor chip and covered by the chip sealing material. Accordingly, the semiconductor device package provides increased device reliability.

    SEMICONDUCTOR DEVICE PACKAGE
    2.
    发明申请

    公开(公告)号:US20190043831A1

    公开(公告)日:2019-02-07

    申请号:US15832266

    申请日:2017-12-05

    Abstract: A semiconductor device package includes a buffer layer having an upper surface perpendicular to a first direction, a plurality of semiconductor chips stacked on the buffer layer one by one in the first direction, and a chip sealing material surrounding sidewalls of the semiconductor chips. The semiconductor chips include an upper semiconductor chip at a farthest position from the buffer layer and a remaining plurality of intermediate semiconductor chips. Each of the intermediate semiconductor chips includes through silicon vias (TSVs) passing through each of the intermediate semiconductor chips. The upper semiconductor chip includes a trench formed in at least a portion of a periphery of the upper semiconductor chip and covered by the chip sealing material. Accordingly, the semiconductor device package provides increased device reliability.

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