公开(公告)号：US20250075323A1

公开(公告)日：2025-03-06

申请号：US18442991

申请日：2024-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SungYoung YOON ,  Sung-Yeol KIM ,  Jaehyun CHOI ,  Meehyun LIM ,  Dongseok KANG ,  Youngil KANG ,  Dongsu KIM

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/52

Abstract: A substrate support according to an embodiment includes: a body portion that has a substrate disposition surface at an upper portion thereof; an RF electrode that is disposed inside the body portion; a heater electrode that is disposed below the RF electrode; and a shaft that is formed on a lower portion surface disposed at an opposite side of the substrate disposition surface and has a hollow. The RF electrode includes a first outer RF electrode surrounding the outside of the substrate disposition surface, an inner RF electrode disposed parallel to the substrate disposition surface below the substrate disposition surface, a second outer RF electrode disposed between the inner RF electrode and the heater electrode, an inner electrode conductor having one end connected to the inner RF electrode to be disposed to penetrate the shaft, and an outer electrode conductor having one end connected to the second outer RF electrode to be disposed to penetrate the shaft, and the first outer RF electrode, the inner RF electrode, and the second outer RF electrode are spaced apart from each other to have a non-contact structure.

公开(公告)号：US20230326779A1

公开(公告)日：2023-10-12

申请号：US18042577

申请日：2020-09-15

Applicant: MiCo Ceramics Ltd. ,  Samsung Electronics Co. Ltd.

Inventor： Myungsub JUNG ,  Jun Won SEO ,  Sungyeol KIM ,  Sungyong LIM ,  Hadong JIN ,  Jaehyun CHOI

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/68785

Abstract: Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

公开(公告)号：US20250098269A1

公开(公告)日：2025-03-20

申请号：US18762812

申请日：2024-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun CHOI ,  Dongsik KONG ,  Jihye KWON ,  Junsoo KIM ,  Junbum LEE

IPC: H01L29/423 ,  H01L29/78 ,  H10B12/00

Abstract: An integrated circuit device includes a substrate having formed therein a word line trench extending long in a first horizontal direction, a gate dielectric film covering an inner surface of the word line trench, a word line on the gate dielectric film, the word line filling a lower space of the word line trench and extending long in the first horizontal direction, an insulating capping pattern on the word line, the insulating capping pattern filling an upper space of the word line trench and extending long in the first horizontal direction, and at least one ferroelectric layer arranged at a top portion of the word line and including a first sidewall in contact with the gate dielectric film.