公开(公告)号：US20240088181A1

公开(公告)日：2024-03-14

申请号：US18454110

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683

Abstract: Provided is an image sensor including a semiconductor substrate including a first pixel and a second pixel adjacent to the first pixel, a pixel isolation structure between the first pixel and the second pixel, an anti-reflection layer on the first pixel, the second pixel, and the pixel isolation structure, and a through via structure in a through via hole that is in the anti-reflection layer and the semiconductor substrate. The through via structure may include a first conductive layer on an inner wall of the through via hole, and a second conductive layer on the first conductive layer on the inner wall of the through via hole, and the anti-reflection layer may include TiO2, and the first conductive layer may include a material having a higher work function than Ti.

公开(公告)号：US20230282663A1

公开(公告)日：2023-09-07

申请号：US18100216

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645

Abstract: An image sensor includes a first pixel and a second pixel disposed adjacent to the first pixel. A pixel separation structure is disposed between the first pixel and the second pixel. A rear anti-reflection layer is disposed on the first pixel, the second pixel, and the pixel separation structure. A fence structure is disposed on the rear anti-reflection layer and positioned to overlap the pixel separation structure in a plan view. The fence structure includes a barrier metal layer and a fence. A height of the barrier metal layer is less than a height of the fence. A width of the barrier metal layer is less than a width of the fence.