公开(公告)号：US20230282663A1

公开(公告)日：2023-09-07

申请号：US18100216

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645

Abstract: An image sensor includes a first pixel and a second pixel disposed adjacent to the first pixel. A pixel separation structure is disposed between the first pixel and the second pixel. A rear anti-reflection layer is disposed on the first pixel, the second pixel, and the pixel separation structure. A fence structure is disposed on the rear anti-reflection layer and positioned to overlap the pixel separation structure in a plan view. The fence structure includes a barrier metal layer and a fence. A height of the barrier metal layer is less than a height of the fence. A width of the barrier metal layer is less than a width of the fence.

公开(公告)号：US20250006765A1

公开(公告)日：2025-01-02

申请号：US18758732

申请日：2024-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jehyung RYU ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface, and a second surface opposite to the first surface, the semiconductor substrate further including a photoelectric conversion region; a transmission gate disposed on the first surface of the semiconductor substrate; a buried insulation layer disposed on the first surface of the semiconductor substrate to cover the transmission gate; and a pixel isolation structure disposed in a pixel isolation trench, the pixel isolation trench extending toward the second surface of the semiconductor substrate from the first surface of the semiconductor substrate and passing through the buried insulation layer, the pixel isolation structure defining a plurality of pixels in the semiconductor substrate, a portion of the pixel isolation structure being covered by the buried insulation layer.

公开(公告)号：US20240088181A1

公开(公告)日：2024-03-14

申请号：US18454110

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jehyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683

Abstract: Provided is an image sensor including a semiconductor substrate including a first pixel and a second pixel adjacent to the first pixel, a pixel isolation structure between the first pixel and the second pixel, an anti-reflection layer on the first pixel, the second pixel, and the pixel isolation structure, and a through via structure in a through via hole that is in the anti-reflection layer and the semiconductor substrate. The through via structure may include a first conductive layer on an inner wall of the through via hole, and a second conductive layer on the first conductive layer on the inner wall of the through via hole, and the anti-reflection layer may include TiO2, and the first conductive layer may include a material having a higher work function than Ti.

公开(公告)号：US20240222401A1

公开(公告)日：2024-07-04

申请号：US18231445

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hyung Ryu ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L29/4238

Abstract: A semiconductor device and an image sensor are disclosed. The semiconductor device includes: a gate pattern disposed on a substrate; a first interlayer insulating layer on a sidewall of the gate pattern; a second interlayer insulating layer on the gate pattern and the first interlayer insulating layer; and a first contact plug passing through the second interlayer insulating layer and the first interlayer insulating layer and being in contact with the substrate, where the first contact plug comprises a first contact part in the first interlayer insulating layer and a second contact part in the second interlayer insulating layer, a density of the first interlayer insulating layer is smaller than a density of the second interlayer insulating layer, the first contact part of the first contact plug has a first width, and the second contact part of the first contact plug has a second width smaller than the first width.

公开(公告)号：US11837618B1

公开(公告)日：2023-12-05

申请号：US16999926

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung Hur ,  Taeksoo Jeon ,  Jongmin Baek ,  Sanghoon Ahn ,  Jangho Lee ,  Kyu-Hee Han

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).