公开(公告)号：US11508751B2

公开(公告)日：2022-11-22

申请号：US17144458

申请日：2021-01-08

申请人： Samsung Electronics Co., Ltd.

发明人： Namkyu Edward Cho ,  Seok Hoon Kim ,  Myung Il Kang ,  Geo Myung Shin ,  Seung Hun Lee ,  Jeong Yun Lee ,  Min Hee Choi ,  Jeong Min Choi

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L27/11582 ,  H01L21/768

摘要： A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

公开(公告)号：US10930668B2

公开(公告)日：2021-02-23

申请号：US16272265

申请日：2019-02-11

申请人： Samsung Electronics Co., Ltd.

发明人： Namkyu Edward Cho ,  Seok Hoon Kim ,  Myung Ii Kang ,  Geo Myung Shin ,  Seung Hun Lee ,  Jeong Yun Lee ,  Min Hee Choi ,  Jeong Min Choi

IPC分类号： H01L27/11582 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768

摘要： A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.