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公开(公告)号：US11942551B2
公开(公告)日：2024-03-26
申请号：US17519967
申请日：2021-11-05
发明人： Jung Taek Kim , Seok Hoon Kim , Pan Kwi Park , Moon Seung Yang , Seo Jin Jeong , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423
CPC分类号： H01L29/78618 , H01L29/0665 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
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公开(公告)号：US20230145260A1
公开(公告)日：2023-05-11
申请号：US17831513
申请日：2022-06-03
发明人： Yang Xu , Nam Kyu Cho , Seok Hoon Kim , Yong Seung Kim , Pan Kwi Park , Dong Suk Shin , Sang Gil Lee , Si Hyung Lee
IPC分类号： H01L29/78 , H01L29/417 , H01L29/06
CPC分类号： H01L29/7851 , H01L29/0649 , H01L29/41791
摘要： A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.
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公开(公告)号：US10084049B2
公开(公告)日：2018-09-25
申请号：US15685255
申请日：2017-08-24
发明人： Jin Bum Kim , Gyeom Kim , Seok Hoon Kim , Tae Jin Park , Jeong Ho Yoo , Cho Eun Lee , Hyun Jung Lee , Sun Jung Kim , Dong Suk Shin
IPC分类号： H01L27/12 , H01L29/417 , H01L27/092 , H01L29/51 , H01L29/423 , H01L21/02 , H01L21/3205
CPC分类号： H01L29/41725 , H01L21/02425 , H01L21/28518 , H01L21/32053 , H01L21/823814 , H01L21/823821 , H01L23/485 , H01L27/0924 , H01L29/0847 , H01L29/165 , H01L29/41791 , H01L29/42356 , H01L29/517 , H01L29/66545 , H01L29/7848 , H01L2924/0002
摘要： A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.
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公开(公告)号：US09552618B2
公开(公告)日：2017-01-24
申请号：US14534441
申请日：2014-11-06
发明人： Chang Hyo Yu , Seok Hoon Kim
CPC分类号： G06T1/20 , G06T15/005 , G06T17/20
摘要： A method for domain shading may include analyzing graphics state data, and generating all first primitives through a single-pass domain shading or generating only second primitives which are visible among the first primitives through a two-pass domain shading based on a result of the analysis.
摘要翻译： 域阴影的方法可以包括分析图形状态数据，以及通过单遍域阴影生成所有第一原语，或者仅通过基于分析结果的双遍域阴影生成第一原语中可见的第二原语 。
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公开(公告)号：US12021131B2
公开(公告)日：2024-06-25
申请号：US17460446
申请日：2021-08-30
发明人： Seo Jin Jeong , Do Hyun Go , Seok Hoon Kim , Jung Taek Kim , Pan Kwi Park , Moon Seung Yang , Min-Hee Choi , Ryong Ha
IPC分类号： H01L29/423 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/786
CPC分类号： H01L29/42392 , H01L29/0665 , H01L29/0847 , H01L29/41775 , H01L29/78696
摘要： A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.
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公开(公告)号：US11648594B2
公开(公告)日：2023-05-16
申请号：US16890490
申请日：2020-06-02
发明人： Seung Min Shin , Hun Jae Jang , Seok Hoon Kim , Young-Hoo Kim , In Gi Kim , Tae-Hong Kim , Kun Tack Lee , Ji Hoon Cha , Yong Jun Choi
IPC分类号： B08B7/00 , B08B3/10 , H01L21/67 , H01L21/687 , H01L21/311
CPC分类号： B08B7/0042 , B08B3/10 , B08B7/0064 , H01L21/31111 , H01L21/67051 , H01L21/67075 , H01L21/67098 , H01L21/67248 , H01L21/68764
摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.
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公开(公告)号：US10930668B2
公开(公告)日：2021-02-23
申请号：US16272265
申请日：2019-02-11
发明人： Namkyu Edward Cho , Seok Hoon Kim , Myung Ii Kang , Geo Myung Shin , Seung Hun Lee , Jeong Yun Lee , Min Hee Choi , Jeong Min Choi
IPC分类号： H01L27/11582 , H01L29/66 , H01L29/78 , H01L21/768
摘要： A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.
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8.发明授权公开(公告)号：US09779547B2
公开(公告)日：2017-10-03
申请号：US14310351
申请日：2014-06-20
发明人： Seok Hoon Kim , Yong Ha Park , Chang Hyo Yu , Kil Whan Lee
CPC分类号： G06T17/20 , G06T11/40 , G06T15/005 , G06T15/04 , G06T17/205
摘要： A tessellation method includes assigning a tessellation factor to each of a plurality of points in a patch and generating, in the vicinity of a first point of the plurality of points, at least one new point based on a first tessellation factor assigned to the first point. The at least one first new point corresponds to the first point.
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9.发明授权公开(公告)号：US09460559B2
公开(公告)日：2016-10-04
申请号：US14306782
申请日：2014-06-17
发明人： Seok Hoon Kim , Chang Hyo Yu , Kil Whan Lee , Yong Ha Park
CPC分类号： G06T17/20 , G06T9/001 , G06T2210/52
摘要： A method of generating tessellation data include analyzing patch data of each of a plurality of patches; generating shared data that is shared by the patches, non-shared data that are not shared by the patches, and attribute data on an attribute of control points of each of the patches from the patch data according to a result of the analyzing; and compressing the non-shared data and the attribute data.
摘要翻译： 生成细分数据的方法包括分析多个贴片中的每一个的贴片数据; 根据分析结果生成补丁共享的共享数据，不是由补丁共享的非共享数据，以及来自补丁数据的每个补丁的控制点的属性的属性数据; 并压缩非共享数据和属性数据。
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公开(公告)号：US11631599B2
公开(公告)日：2023-04-18
申请号：US16683753
申请日：2019-11-14
发明人： Ji Hoon Cha , Jinwoo Lee , Seok Hoon Kim , In Gi Kim , Seung Min Shin , Yong Jun Choi
IPC分类号： H01L21/67 , H01L21/687
摘要： An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.
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