公开(公告)号：US20220359424A1

公开(公告)日：2022-11-10

申请号：US17734234

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongseop SHIM ,  Jihye PARK ,  Wangi SOHN ,  Eunshoo HAN

IPC: H01L23/00 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor memory device may include a substrate, a plurality of lower electrodes on the substrate, and a support structure. The plurality of lower electrodes may extend in a first direction perpendicular to a top surface of the substrate. The support structure may have a flat panel shape. The support structure may contact a side surface of the plurality of lower electrodes and may support the plurality of lower electrodes. The support structure may include a plurality of openings. The support structure may include a first part and a second part. The first part may include the plurality of openings repeated by a first pitch. The second part may include the plurality of openings repeated by a second pitch that is different from the first pitch.