公开(公告)号：US20220197541A1

公开(公告)日：2022-06-23

申请号：US17382868

申请日：2021-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun OH ,  Jihwa LEE ,  Kyungduk LEE

IPC: G06F3/06

Abstract: A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.