公开(公告)号：US20220197541A1

公开(公告)日：2022-06-23

申请号：US17382868

申请日：2021-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun OH ,  Jihwa LEE ,  Kyungduk LEE

IPC: G06F3/06

Abstract: A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.

公开(公告)号：US20230176640A1

公开(公告)日：2023-06-08

申请号：US17898588

申请日：2022-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daewon KIM ,  Seungjun OH ,  Junwoo CHO

IPC: G06F1/28 ,  G06F1/26 ,  G06F1/3225

CPC classification number: G06F1/28 ,  G06F1/266 ,  G06F1/3225

Abstract: A storage device including: a controller configured to be connected to an external host through an interface; a plurality of memory devices configured to store data; and a power management device configured to output an internal power voltage for an operation of the plurality of memory devices using an external power voltage received through the interface and having a flag signal pad for receiving a flag signal from the controller when the controller fails to recognize at least one of the plurality of memory devices, wherein, when the flag signal is received, the power management device changes a slope of the internal power voltage, and supplies the internal power voltage having the changed slope to the plurality of memory devices.