Abstract:
A photo-mask for fabricating a semiconductor device may include a transparent substrate including a main region, a supplementary region adjacent to the main region, a main pattern for developing circuits in a semiconductor device provided on the main region of the transparent substrate, and a supplementary pattern for optical proximity correction provided on the supplementary region of the transparent substrate. The main pattern has a sidewall perpendicular to a surface of the transparent substrate, and the supplementary pattern has a sidewall inclined to the surface of the transparent substrate and an upward tapered structure.
Abstract:
The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). According to various embodiments of the present disclosure, a device of a terminal in a wireless communication system can include at least one transceiver and at least one processor operationally coupled with at least one transceiver. At least one processor can receive configuration information from a first network node for a first radio access technology (RAT), measure a first quality for a first signal of the first RAT and a second quality for a second signal of a second RAT on the basis of the received configuration information, and determine, whether a handover to a second network for the second RAT is performed, on the basis of the measured first quality or the measured second quality. The configuration information can include parameters for the handover between the first RAT and the second RAT.