公开(公告)号：US20230225112A1

公开(公告)日：2023-07-13

申请号：US17949356

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younglim Park ,  Jimin Chae ,  Chanhoon Park ,  Dongmin Shin ,  Jaesoon Lim ,  Intak Jeon

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

Abstract: A semiconductor device including a substrate, lower electrodes disposed on the substrate, at least one support layer in contact with the lower electrodes, a dielectric layer disposed on the lower electrodes, an upper electrode disposed on the dielectric layer, a first interfacial film between the lower electrodes and the dielectric layer, and a second interfacial film between the upper electrode and the dielectric layer. At least one of the first and second interfacial films includes a plurality of layers, wherein the plurality of layers include a first metal element, and a second metal element, and at least one of oxygen \and nitrogen. The lower electrodes include the first metal element. A first region of the first interfacial film includes the second metal element at a first concentration and a second region of the first interfacial film includes the second metal element at a second concentration different from the first concentration.