公开(公告)号：US20240413251A1

公开(公告)日：2024-12-12

申请号：US18539890

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyen-Hee LEE ,  Jin Myoung LEE

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor device including a substrate including a first region and a second region, a first active pattern extending in a first direction on the first region, a second active pattern extending in the first direction on the second region, a wall structure extending in the first direction between the first region and the second region and separating the first active pattern and the second active pattern from each other, a first gate structure intersecting the first active pattern on the first region, a first two-dimensional (2D) channel layer including a first transition metal dichalcogenide between the first active pattern and the first gate structure, a second gate structure intersecting the second active pattern on the second region, and a second 2D channel layer including a second transition metal dichalcogenide between the second active pattern and the second gate structure may be provided.