公开(公告)号：US20240413251A1

公开(公告)日：2024-12-12

申请号：US18539890

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyen-Hee LEE ,  Jin Myoung LEE

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor device including a substrate including a first region and a second region, a first active pattern extending in a first direction on the first region, a second active pattern extending in the first direction on the second region, a wall structure extending in the first direction between the first region and the second region and separating the first active pattern and the second active pattern from each other, a first gate structure intersecting the first active pattern on the first region, a first two-dimensional (2D) channel layer including a first transition metal dichalcogenide between the first active pattern and the first gate structure, a second gate structure intersecting the second active pattern on the second region, and a second 2D channel layer including a second transition metal dichalcogenide between the second active pattern and the second gate structure may be provided.

公开(公告)号：US20230120551A1

公开(公告)日：2023-04-20

申请号：US17736367

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyen-Hee LEE ,  Kyung Soo Kim ,  Sung Il PARK

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: lower nanosheets; upper nanosheets on the lower nanosheets; gate electrodes on the substrate and provided around each of the nanosheets; a first lower source/drain region on a first side of the first and second gate electrodes; a second lower source/drain region on a second side of the first and second gate electrodes; a first upper source/drain region on the first lower source/drain region; and a second upper source/drain region on the second lower source/drain region. A first length of the second lower source/drain region is greater than a second length of the second upper source/drain region.

公开(公告)号：US20230378289A1

公开(公告)日：2023-11-23

申请号：US18318123

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Soo KIM ,  Kyen-Hee LEE

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L27/088 ,  H01L29/18

CPC classification number: H01L29/41733 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/78696 ,  H01L27/088 ,  H01L29/18

Abstract: A semiconductor device includes a substrate, a two-dimensional material layer on the substrate, the two-dimensional material layer extending in a first direction, a gate structure extending in a second direction intersecting the first direction, the gate structure on the two-dimensional material layer, and a source/drain contact on the substrate. The source/drain contact surrounds each opposing end of the two-dimensional material layer, the source/drain contact includes a first portion in contact with each opposing end of the two-dimensional material layer, the source/drain contact includes a second portion on the first portion, and the second portion has a larger aspect ratio than an aspect ratio of the first portion.

公开(公告)号：US20230292508A1

公开(公告)日：2023-09-14

申请号：US17961035

申请日：2022-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyen-Hee LEE ,  Kyungsoo KIM

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/41733 ,  H01L29/42392

Abstract: A three dimensional semiconductor device includes first, second, third and fourth source/drain patterns sequentially stacked on a substrate, a contact structure on the first to fourth source/drain patterns and a contact line on the contact structure. The contact structure includes a first active contact on the first source/drain pattern, a second active contact on the second source/drain pattern, a third active contact on the third source/drain pattern, and a fourth active contact on the fourth source/drain pattern. A first vertical extension part of the first active contact is adjacent to one side of the contact structure, and a second vertical extension part of the second active contact is adjacent to the other side of the contact structure. A third vertical extension part of the third active contact is disposed between the first and second vertical extension parts and is closer to the first vertical extension part.