公开(公告)号：US20200151106A1

公开(公告)日：2020-05-14

申请号：US16546598

申请日：2019-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-oh Ahn ,  Hyun-wook Shin ,  Walter Jun

IPC: G06F12/0882 ,  G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: In a method of operating a storage device including anon-volatile memory (NVM), the non-volatile memory including a memory cell array, the memory cell array including a first plane and a second plane, the method includes receiving a read command set for data sensing of the first and second plane; simultaneously loading first page data stored in the first plane into a first age buffer of the first plane and second page data stored in the second plane into a second page buffer of the second plane based on the read command set; receiving a data output command set that includes the first plane; and continuously transmitting the first page data and the second page databased on the data output command set.

公开(公告)号：US11182301B2

公开(公告)日：2021-11-23

申请号：US16546598

申请日：2019-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-oh Ahn ,  Hyun-wook Shin ,  Walter Jun

IPC: G06F12/0882 ,  G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: In a method of operating a storage device including a non-volatile memory (NVM), the non-volatile memory including a memory cell array, the memory cell array including a first plane and a second plane, the method includes receiving a read command set for data sensing of the first and second plane; simultaneously loading first page data stored in the first plane into a first page buffer of the first plane and second page data stored in the second plane into a second page buffer of the second plane based on the read command set; receiving a data output command set that includes the first plane; and continuously transmitting the first page data and the second page databased on the data output command set.