公开(公告)号：US11913122B2

公开(公告)日：2024-02-27

申请号：US17108280

申请日：2020-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghwan Lee ,  Kwangjoo Kim ,  Jinju Kim ,  Jiyoung Song

IPC: C23F1/02 ,  C23F17/00 ,  C23F1/36

CPC classification number: C23F1/02 ,  C23F1/36 ,  C23F17/00

Abstract: A pattern forming method is disclosed. The pattern forming method includes buffing a surface of a product containing aluminum, masking at least a part of the buffed surface with an etching resist, etching a part of the buffed surface not masked by the etching resist, removing the etching resist from the surface, and anodizing the surface from which the etching resist is removed.