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136 条记录 (耗时 0.031 秒)

    Selective metal/metal oxide etch process
    3.
    发明授权
    Selective metal/metal oxide etch process 有权

    公开(公告)号：US10297465B2

    公开(公告)日：2019-05-21

    申请号：US15108945

    申请日：2015-01-13

    申请人： SACHEM, INC.

    发明人： Paul Vermeulen ,  Craig Allen

    IPC分类号： H01L29/00 ,  H01L21/44 ,  C23F1/34 ,  C23F1/36 ,  C23F1/38 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

    摘要： The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate comprising a layer of oxide semiconductor and a layer comprising molybdenum or titanium on the layer of oxide semiconductor; preparing the substrate by applying a photoresist layer over the layer comprising molybdenum or titanium, and then patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium; providing a composition comprising ammonia or ammonium hydroxide, a quaternary ammonium hydroxide and a peroxide; and applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, wherein the etching selectively removes the molybdenum or titanium relative to the oxide semiconductor.

    Method of cleaning a coated process chamber component
    8.
    发明授权
    Method of cleaning a coated process chamber component 有权
    清洁涂层处理室部件的方法

    公开(公告)号：US06902628B2

    公开(公告)日：2005-06-07

    申请号：US10304535

    申请日：2002-11-25

    申请人： Hong Wang ,  Yongxiang He ,  Clifford C Stow

    发明人： Hong Wang ,  Yongxiang He ,  Clifford C Stow

    IPC分类号： B24C1/00 ,  C22B7/00 ,  C23C14/56 ,  C23F1/36 ,  C23G1/12 ,  B08B3/04

    CPC分类号： C23G1/125 ,  B24C1/06 ,  C22B7/007 ,  C23C14/564 ,  C23F1/36 ,  Y02P10/234 ,  Y10S134/902

    摘要： In a method of cleaning and refurbishing a process chamber component having a metal coating having a surface thereon, the surface of the metal coating is immersed in an acidic solution to remove at least a portion of the process deposits from the surface. Thereafter, the surface of the metal coating is immersed in a basic solution to remove substantially all the metal coating. The component may optionally be bead blasting to roughen a surface of the component, and the metal coating may be re-formed.

    摘要翻译： 在清洁和翻新具有其上具有表面的金属涂层的处理室部件的方法中，将金属涂层的表面浸入酸性溶液中以从表面除去至少一部分工艺沉积物。 此后，将金属涂层的表面浸入碱性溶液中以除去基本上所有的金属涂层。 组分可以任选地是珠粒喷射以使组分的表面粗糙化，并且可以重新形成金属涂层。

    Printed circuit plates
    10.
    发明授权
    Printed circuit plates 失效
    印刷电路板

    公开(公告)号：US5858255A

    公开(公告)日：1999-01-12

    申请号：US326367

    申请日：1994-10-20

    申请人： Ichiro Kohara ,  Masakatu Takaishi ,  Hideaki Ishitobi ,  Kiyoshi Kondo ,  Hiroya Ito

    发明人： Ichiro Kohara ,  Masakatu Takaishi ,  Hideaki Ishitobi ,  Kiyoshi Kondo ,  Hiroya Ito

    IPC分类号： C23F1/20 ,  C23F1/36 ,  H05K3/06 ,  H01L21/302 ,  H01L21/3213

    CPC分类号： C23F1/36 ,  C23F1/20 ,  Y10S428/901

    摘要： A method for manufacturing printed circuit plates, which includes laminating an aluminum rolled leaf on a surface of an insulator base, forming an etching resist coat film on the surface of the aluminum rolled leaf, and then dissolving and removing an unnecessary aluminum leaf in the non-resist area with an etching liquid. The etching liquid is an aqueous solution containing (1) 0.1 to 15 mol/liter of acid of an amine hydrofluoride and (2) 0.02 to 10 mol/liter of a hydrogen peroxide, wherein the amine is one of an aliphatic amine having 12 carbon atoms or less and a heterocyclic amine, the amine having no other acid group or basic group than amino group, the etching liquid having a pH within the range from 4 to 9, wherein the hydrogen peroxide oxidizes aluminum into an aluminum oxide which is dissolved by the amine hydrofluoride.

    摘要翻译： 一种印刷电路板的制造方法，其特征在于，在绝缘体基材的表面上层叠铝卷状叶片，在所述铝卷板的表面上形成抗蚀剂涂膜，然后将不需要的铝箔 具有蚀刻液体的区域。 蚀刻液是含有（1）0.1〜15摩尔/升的胺氢氟酸的酸和（2）0.02〜10摩尔/升过氧化氢的水溶液，其中，胺是具有12个碳原子的脂肪族胺 原子以下的杂环胺和杂原子胺，所述胺不具有氨基以外的其他酸基或碱性基团，所述蚀刻液的pH在4〜9的范围内，其中所述过氧化氢将铝氧化为氧化铝，所述氧化铝被 胺氢氟酸盐。