公开(公告)号：US20140120683A1

公开(公告)日：2014-05-01

申请号：US14028976

申请日：2013-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyongsoo KIM ,  Jin-Su LEE ,  Hojun KWON ,  Dongkyun PARK ,  Jiseung LEE ,  Young-Seok CHOI

IPC: H01L49/02

CPC classification number: H01L27/10817 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract translation: 半导体器件的电容器及其制造方法包括在半导体衬底上顺序地形成模具结构和多晶硅图案，使用多晶硅图案将模具结构图案化为蚀刻掩模，以形成贯穿模具结构的下部电极孔 形成覆盖多晶硅图案的表面的保护层，在设置有保护层的下电极孔中形成下电极，去除多晶硅图案和保护层以暴露下电极的上侧壁，去除模具结构暴露 下电极的下侧壁，并且依次形成覆盖下电极的电介质和上电极。